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TS51111 Folha de dados(PDF) 10 Page - Semtech Corporation

Nome de Peças TS51111
Descrição Electrónicos  High Efficiency Synchronous Rectifier and Charging IC for Wireless Power Applications
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Fabricante Electrônico  SEMTECH [Semtech Corporation]
Página de início  http://www.semtech.com
Logo SEMTECH - Semtech Corporation

TS51111 Folha de dados(HTML) 10 Page - Semtech Corporation

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TS51111
Final Datasheet
Rev 2.2
April 17, 2015
www.semtech.com
10 of 22
Semtech
Proprietary & Confidential
Electrical Characteristics, T
J = -40C to 85C, PDC = PACKP = 4.2V (unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Temperature Sensing
T
SHUTDOWN
Over-temperature shutdown
threshold
Temperature rising
170
C
T
HYST
Over-temperature shutdown
hysteresis
10
C
V
TSENSE
Temperature Sensor Voltage
25C
0.725
.75
0.775
V
TCV
TSENSE
Temperature Coefficient
0C to 85C
2.4
mV/C
Current Sensing
IBSENSE GAIN
Battery current sense amp gain
PACKN - AGND 10mV to 20mV; Gain
setting = 20
19.6
20
20.4
V/V
IOSENSE GAIN
Output current sense amp gain
PACKP - PACKS 10mV to 20mV
Gain setting = 20; PACKP = 5V
19.6
20
20.4
V/V
IBSENSE V
OFFSET
Battery current sense amp offset
PACKN - AGND = 20mV; Gain setting
= 20; 25C
-0.5
0
0.5
mV
IOSENSE V
OFFSET
Output current sense amp offset
PACKP - PACKS = 20mV
Gain = 20; PACKP = 5V; 25C
-0.5
0
0.5
mV
V
IB,MAX
Full range amp output
750
mV
V
IO,MAX
Full range amp output
750
mV
VAC Detect
V
OH
Output high voltage
Totem-pole configuration only. 100uA
load.
VCORE-
100mV
V
V
OL
Output low voltage
Totem-pole or open-drain
configurations. 100uA load.
100
mV
I
OFF
Output leakage
Output leakage in open-drain
off-state.
0.1
uA
R
dson,VAC_DETECT
Switch Resistance
Output resistance to GND in
open-drain on-state.
10
Ω
Functional Description
Synchronous Rectifier
The bridge rectifier in the TS51111 has a synchronous
controller which shunts the forward bias of the bridge diodes.
This allows the TS51111 to provide currents of up to 3.2A to be
efficiently transferred without significant power dissipation.
The primary side of the bridge can stand-off up to 20V. On the
secondary side, a capacitive load on the PDC pin can be used
to help attenuate the voltage signal observed on both sides
of the bridge rectifier. External boost capacitors CB1 and CB2
allow use of efficient high side nmos switches.
The rectifier is disabled by default and will remain in an
asynchronous mode until incoming power is detected or
EN_SW or EN_PRE are asserted. In asynchronous mode, the
bridge FETs will not switch and voltage rectification will occur
through the parasitic diodes of the FETs. In this mode, current
draw in the IC is minimal.
The bridge can be forced into asynchronous (no FET switching)
or half synchronous (LS FET only switching) operation at any
time using the CNFG register using the ASYNC or HSYNC bits
respectively. This can be used to improve efficiency at light
loads where the switching losses of the bridge would exceed
the conduction losses of the parasitic diodes.
Load Switch / Blocking FET
The integrated low impedance blocking switch provides a
direct charging path to the battery and disconnects the output
from the rectified signal until the system has been successfully
configured. Control of the switch is achieved through the I2C
interface. An integrated charge pump guarantees maximum
drive strength is available for the FET when operated as a
switch. When hard switched, gate drive is slewed slowly to
limit inrush current from the PDC cap to the battery.


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