E-PHEMT

SAV-581+

Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

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Typical Performance Curves

NOISE FIGURE vs IDS @ 0.9 GHz (1)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

15

20

25

30

35

40

45

50

55

60

IDS (mA)

VDS=3V

VDS=4V

GAIN vs IDS @ 2 GHz (1)

14.0

14.5

15.0

15.5

16.0

16.5

17.0

17.5

18.0

18.5

19.0

19.5

20.0

10

15

20

25

30

35

40

45

50

55

60

IDS (mA)

VDS=3V

VDS=4V

NOISE FIGURE vs IDS @ 2 GHz (1)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

15

20

25

30

35

40

45

50

55

60

IDS (mA)

VDS=3V

VDS=4V

(1) Includes test board loss, set-up and conditions per Figure 1.

(2) Measured using HP4155B semiconductor parameter analyzer.

(3) F Min is minimum Noise Figure.

(4) Drain current was allowed to increase during compression measurement.

F Min vs IDS @ 2 GHz (3)

0.25

0.27

0.29

0.31

0.33

0.35

0.37

0.39

0.41

0.43

0.45

10

15

20

25

30

35

40

45

50

55

60

IDS (mA)

VDS=2V

VDS=3V

VDS=4V

F Min vs IDS @ 0.9 GHz (3)

0.10

0.11

0.12

0.13

0.14

0.15

0.16

0.17

0.18

0.19

0.20

10

15

20

25

30

35

40

45

50

55

60

IDS (mA)

VDS=2V

VDS=3V

VDS=4V

I-V (VGS=0.1V PER STEP) (2)

0

20

40

60

80

100

120

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

VDS (V)

0.2V

0.3V

0.4V

0.5V