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TAV-551 Folha de dados(PDF) 1 Page - Mini-Circuits |
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TAV-551 Folha de dados(HTML) 1 Page - Mini-Circuits |
1 / 13 page Ultra Low Noise, Low Current E-PHEMT Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 1 of 13 TAV-551+ REV. B M123887 ED-13285 TAV-551+ 150319 0.45-6GHz CASE STYLE: FG873 PRICE: $0.99 ea. QTY. (20) Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required Typical Applications • Cellular • ISM • GSM • WCDMA • WiMax • WLAN • UNII and HIPERLAN General Description TAV-551+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly be- low 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a com- plete module, 50 Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. Function Pad Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF input Drain 1 Drain used for RF output simplified schematic and pin description G AT E S OUR C E DR AIN G AT E DR AIN S OUR C E S OUR C E * Enhancement mode Pseudomorphic High Electron Mobility Transistor. +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications |
Nº de peça semelhante - TAV-551 |
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Descrição semelhante - TAV-551 |
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