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ES1DF Folha de dados(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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ES1DF Folha de dados(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Halogen-free according to IEC 61249-2-21 Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test SYMBOL ES1DF ES1GF ES1JF UNIT VRRM 200 400 600 V VRMS 140 280 420 V VDC 200 400 600 V IF(AV) A CJ pF trr ns TJ °C TSTG °C Version: B1604 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) ES1DF - ES1JF 1A, 200V - 600V Surface Mount Super Fast Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAF DATA SMAF μA Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load 1.70 1 30 1.00 1.30 Maximum reverse recovery time (Note 3) 9 RθJL RθJA Maximum reverse current @ rated VR TJ=25°C TJ=125°C IR Case: SMAF Maximum repetitive peak reverse voltage PARAMETER Polarity: Indicated by cathode band Weight: 35 mg (approximately) A Maximum instantaneous forward voltage (Note 1) @ 1 A VF V °C/W 100 35 IFSM Typical junction capacitance (Note 2) Typical thermal resistance Note 3: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A Taiwan Semiconductor 35 85 Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300μs, 1% duty cycle - 55 to +150 - 55 to +150 5 Note 2: Measured at 1 MHz and applied VR=4.0 V |
Nº de peça semelhante - ES1DF |
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Descrição semelhante - ES1DF |
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