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BCP28 Folha de dados(PDF) 1 Page - Diotec Semiconductor |
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BCP28 Folha de dados(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 01.11.2003 4 3 2 1 3 ±0.1 6.5 ±0.2 0.7 3.25 2.3 1.65 BCP 28, BCP 48 Darlington Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.5 W Plastic case SOT-223 Kunststoffgehäuse Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B1 2, 4 = C 3 = E2 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25 /C) Grenzwerte (T A = 25 /C) BCP 28 BCP 48 Collector-Emitter-voltage B open - V CE0 30 V 60 V Collector-Base-voltage E open - V CB0 40 V 80 V Emitter-Base-voltage C open - V EB0 10 V Power dissipation – Verlustleistung P tot 1.5 W 1) Collector current – Kollektorstrom (DC) - I C 500 mA Peak Collector current – Kollektor-Spitzenstrom - I CM 800 mA Base current – Basisstrom (DC) - I B 100 mA Peak Base current – Basisstrom - I BM 200 mA Junction temperature – Sperrschichttemperatur T j 150 /C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /C Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, - VCB = 30 V BCP 28 - I CB0 – – 100 nA I E = 0, - VCB = 60 V BCP 48 - I CB0 – – 100 nA I E = 0, - VCB = 30 V, TA = 150 /C BCP 28 - I CB0 – – 10 :A I E = 0, - VCB = 60 V, TA = 150 /C BCP 48 - I CB0 – – 10 :A Emitter-Base cutoff current – Emitterreststrom I C = 0, - VEB = 4 V - I EB0 – – 100 nA |
Nº de peça semelhante - BCP28 |
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Descrição semelhante - BCP28 |
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