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BCP28 Folha de dados(PDF) 1 Page - Diotec Semiconductor

Nome de Peças BCP28
Descrição Electrónicos  Surface mount Si-Epitaxial PlanarTransistors
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Fabricante Electrônico  DIOTEC [Diotec Semiconductor]
Página de início  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BCP28 Folha de dados(HTML) 1 Page - Diotec Semiconductor

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003
4
3
2
1
3
±0.1
6.5
±0.2
0.7
3.25
2.3
1.65
BCP 28, BCP 48
Darlington Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung
1.5 W
Plastic case
SOT-223
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B1 2, 4 = C 3 = E2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A = 25
/C)
Grenzwerte (T
A = 25
/C)
BCP 28
BCP 48
Collector-Emitter-voltage
B open
- V
CE0
30 V
60 V
Collector-Base-voltage
E open
- V
CB0
40 V
80 V
Emitter-Base-voltage
C open
- V
EB0
10 V
Power dissipation – Verlustleistung
P
tot
1.5 W 1)
Collector current – Kollektorstrom (DC)
- I
C
500 mA
Peak Collector current – Kollektor-Spitzenstrom
- I
CM
800 mA
Base current – Basisstrom (DC)
- I
B
100 mA
Peak Base current – Basisstrom
- I
BM
200 mA
Junction temperature – Sperrschichttemperatur
T
j
150
/C
Storage temperature – Lagerungstemperatur
T
S
- 65…+ 150
/C
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
I
E = 0, - VCB = 30 V
BCP 28
- I
CB0
100 nA
I
E = 0, - VCB = 60 V
BCP 48
- I
CB0
100 nA
I
E = 0, - VCB = 30 V, TA = 150
/C BCP 28
- I
CB0
10
:A
I
E = 0, - VCB = 60 V, TA = 150
/C BCP 48
- I
CB0
10
:A
Emitter-Base cutoff current – Emitterreststrom
I
C = 0, - VEB = 4 V
- I
EB0
100 nA


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