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BYZ35K27 Folha de dados(PDF) 1 Page - Diotec Semiconductor

Nome de Peças BYZ35K27
Descrição Electrónicos  Silicon Protectifiers with TVS characteristics High-temperature diodes
Download  2 Pages
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Fabricante Electrônico  DIOTEC [Diotec Semiconductor]
Página de início  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BYZ35K27 Folha de dados(HTML) 1 Page - Diotec Semiconductor

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1
07.01.2003
BYZ 35A22 ... BYZ 35A47
BYZ 35K22 ... BYZ 35K47
Silicon Protectifiers
Silizium Schutzgleichrichter
with TVS characteristics
mit Begrenzereigenschaften
High-temperature diodes
Hochtemperaturdioden
Nominal current – Nennstrom
35 A
Nominal breakdown voltage
19.8 ... 51.7 V
Nominale Abbruch-Spannung
Metal press-fit case with plastic cover
Metall-Einpreßgehäuse mit Plastik-Abdeckung
Weight approx. – Gewicht ca.
10 g
Casting compound has UL classification 94V-0
Vergußmasse UL94V-0 klassifiziert
Dimensions / Maße in mm
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type / Typ
Wire to / Draht an
Anode
Cathode
Breakdown voltage
Abbruch-Spannung
I
T = 100 mA
V
BRmin [V] VBRmax
Reverse voltage
Sperrspannung
I
R = 5
:A
V
R [V]
Max. clamping voltage
Max. Begrenzerspanng.
at / bei I
PP, tp = 1m s
V
C [V]
I
PP [A]
BYZ 35A22
BYZ 35K22
19.8
24.2
> 17.8
31,9
161
BYZ 35A27
BYZ 35K27
24.3
29.7
> 21.8
39,1
128
BYZ 35A33
BYZ 35K33
29.7
36.3
> 26.8
47,7
106
BYZ 35A39
BYZ 35K39
35.1
42.9
> 31.6
56,4
89
BYZ 35A47
BYZ 35K47
42.3
51.7
> 38.1
67,8
75
Max. average forward rectified current, R-load
T
C = 150
/CI
FAV
35 A
Dauergrenzstrom in Einwegschaltung mit R-Last
Peak forward surge current, 50 / 60 Hz half sine-wave
T
A = 25
/CI
FSM
360 / 400 A
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
Rating for fusing, t <10 ms
T
A = 25
/Ci2t
660 A2s
Grenzlastintegral, t <10 ms
Forward voltage
T
j = 25
/CI
F = 35 A
V
F
< 1.1 V
Durchlaßspannung
Operating junction temperature – Sperrschichttemperatur
T
j
– 50…+215
/C
Storage temperature – Lagerungstemperatur
T
S
– 50…+215
/C
Ø
±01
13
1.3
Ø
±0.1
11
Ø 12.75


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