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IRF100B202 Folha de dados(PDF) 1 Page - International Rectifier |
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IRF100B202 Folha de dados(HTML) 1 Page - International Rectifier |
1 / 10 page HEXFET® Power MOSFET D S G Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant, Halogen-Free VDSS 100V RDS(on) typ. 7.2m max 8.6m ID (Silicon Limited) 97A TO-220AB IRF100B202 S D G G D S Gate Drain Source Base part number Package Type Standard Pack Form Quantity IRF100B202 TO-220 Tube 50 IRF100B202 Orderable Part Number 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 18, 2014 StrongIRFET™ IRF100B202 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0 20 40 60 80 100 Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On– Resistance vs. Gate Voltage 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 5 10 15 20 25 ID = 58A TJ = 25°C TJ = 125°C |
Nº de peça semelhante - IRF100B202 |
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Descrição semelhante - IRF100B202 |
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