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BUZ60B Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças BUZ60B
Descrição Electrónicos  SOA is Power Dissipation Limited
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUZ60B Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUZ60B Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUZ60B Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
BUZ60B
·ELECTRICAL CHARACTERISTICS (T
C=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
400
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
2.1
4
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 10V; ID= 2.5A
1.5
Ω
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
250
uA
VSD
Diode Forward Voltage
IF=9A; VGS= 0
1.5
V
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