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ES1D Folha de dados(PDF) 1 Page - Diotec Semiconductor |
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1 / 2 page ES1A ... ES1J ES1A ... ES1J Superfast Efficient SMD Rectifier Diodes Superschnelle SMD-Gleichrichter für hohen Wirkungsgrad IFAV = 1 A VF1 < 0.92 V Tjmax = 150°C VRRM = 50...600 V IFSM = 30/33 A trr < 15...35 ns Version 2015-10-22 ~ SMA / ~ DO-214AC Dimensions - Maße [mm] Typical Applications Rectification of higher frequencies High efficient switching stages Commercial grade 1) Typische Anwendungen Gleichrichtung hoher Frequenzen Wandlerstufen mit hohem Wirkungsgrad Standardausführung 1) Features Extremely low reverse recovery time Low forward voltage drop Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Extrem niedrige Sperrverzugszeit Niedrige Fluss-Spannung Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped and reeled 7500 / 13“ Gegurtet auf Rolle Weight approx. 0.07 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = 1 Maximum ratings and Characteristics 2) Grenz- und Kennwerte 2) Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] ES1A 50 50 ES1B 100 100 ES1C 150 150 ES1D 200 200 ES1F 300 300 ES1G 400 400 ES1J 600 600 Max. average forward rectified current – Dauergrenzstrom in Einwegschaltung TT = 100°C IFAV 1 A Repetitive peak forward current – Periodischer Spitzenstrom f > 15 Hz IFRM 6 A 3) Peak forward surge current (half sine) – Stoßstrom (Sinushalbw.) 50/60 Hz TA = 25°C IFSM 30/33 A Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms TA = 25°C i2t 4.5 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 70 K/W 4) Thermal resistance junction to terminal Wärmewiderstand Sperrschicht – Anschluss RthT < 30 K/W Typ. junction capacitance – Typ. Sperrschichtkapazitat VR = 4 V Cj 10 pF 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben 3 Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C 4 Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss © Diotec Semiconductor AG http://www.diotec.com/ 1 Type Typ 0.15 1 ± 0.3 4.5± 0.3 5 ± 0.2 Pb RoHS |
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