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BYZ35A47 Folha de dados(PDF) 1 Page - Diotec Semiconductor

Nome de Peças BYZ35A47
Descrição Electrónicos  High Temperature Diodes
Download  2 Pages
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Fabricante Electrônico  DIOTEC [Diotec Semiconductor]
Página de início  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BYZ35A47 Folha de dados(HTML) 1 Page - Diotec Semiconductor

  BYZ35A47 Datasheet HTML 1Page - Diotec Semiconductor BYZ35A47 Datasheet HTML 2Page - Diotec Semiconductor  
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BYZ35A22 ... BYZ35A47, BYZ35K22 ... BYZ35K47
BYZ35A22 ... BYZ35A47, BYZ35K22 ... BYZ35K47
Silicon-Protectifiers® with TVS characteristic – High Temperature Diodes
Silizium-Schutzgleichrichter mit Begrenzereigenschaft – Hochtemperatur-Dioden
Version 2015-04-15
Dimensions - Maße [mm]
Nominal Current
Nennstrom
35 A
Nominal breakdown voltage
Nominale Abbruchspannung
22 ... 47 V
Metal press-fit case with plastic cover
Metall-Einpressgehäuse mit Plastik-Abdeckung
Weight approx.
Gewicht ca.
10 g
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type / Typ
Wire to / Draht an
Breakdown voltage
Abbruchspannung
IT = 100 mA
Reverse voltage
Sperrspannung
IR = 5 µA
Max. clamping voltage
Max. Begrenzerspanng.
at / bei Ipp, tp = 1 ms
Anode
Cathode
VBRmin [V]
VBRmax [V]
VR [V]
VC [V]
Ipp [A]
BYZ35A22
BYZ35K22
19.8
24.2
> 17.8
31.9
157
BYZ35A27
BYZ35K27
24.3
29.7
> 21.8
39.1
128
BYZ35A33
BYZ35K33
29.7
36.3
> 26.8
47.7
105
BYZ35A39
BYZ35K39
35.1
42.9
> 31.6
56.4
89
BYZ35A47
BYZ35K47
42.3
51.7
> 38.1
67.8
74
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 150°C
IFAV
35 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
72 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
360/400 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
660 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+200°C
-50...+200°C
Peak junction temperature in case of “Load-Dump“
Spitzensperrschichttemperatur bei “Load-Dump“
tp < 400 ms
TjM
+215°C
1
Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 12.75
Ø
±0.5
11
1.3


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