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KSD985 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSD985 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor KSD985 DESCRIPTION · Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) · DC Current Gain- : hFE = 2000(Min) @ IC= 1A · Low Collector Saturation Voltage APPLICATIONS · They are suitable for use to operate from IC without predriver, such as hammer driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 3.0 A IB Base Current 0.15 A PC Collector Power Dissipation Ta=25℃ 1.0 W Collector Power Dissipation TC=25℃ 10 Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Nº de peça semelhante - KSD985 |
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Descrição semelhante - KSD985 |
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