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FDC2114QRGHRQ1 Folha de dados(PDF) 4 Page - Texas Instruments

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Nome de Peças FDC2114QRGHRQ1
Descrição Electrónicos  Multi-Channel 12-Bit or 28-Bit Capacitance-to-Digital Converter
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

FDC2114QRGHRQ1 Folha de dados(HTML) 4 Page - Texas Instruments

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FDC2112-Q1, FDC2114-Q1, FDC2212-Q1, FDC2214-Q1
SNOSCZ9 – MAY 2016
www.ti.com
Product Folder Links: FDC2112-Q1 FDC2114-Q1 FDC2212-Q1 FDC2214-Q1
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Copyright © 2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VDD
Supply voltage
5
V
Vi
Voltage on any pin
–0.3
VDD + 0.3
V
IA
Input current on any INx pin
–8
8
mA
ID
Input current on any digital pin
–5
5
mA
TJ
Junction temperature
–55
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002(1)
±2000
V
Charged-device model (CDM), per AEC Q100-011
±750
6.3 Recommended Operating Conditions
Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V
MIN
NOM
MAX
UNIT
VDD
Supply voltage
2.7
3.6
V
TA
Operating temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
FDC2112 /
FDC2212
FDC2214 /
FDC2214
UNIT
DNT (WSON)
RGH (WQFN)
12 PINS
16 PINS
RθJA
Junction-to-ambient thermal resistance
36.7
35.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
36.2
36.2
°C/W
RθJB
Junction-to-board thermal resistance
14
13.4
°C/W
ψJT
Junction-to-top characterization parameter
0.4
0.4
°C/W
ψJB
Junction-to-board characterization parameter
14.2
13.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
3.5
3.5
°C/W


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