IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH75N60C3D1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

e

∅ P

TO-247 (IXXH) Outline

1

2

3

Terminals: 1 - Gate

2 - Collector

3 - Emitter

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Reverse Diode (FRED)

Symbol Test Conditions

Characteristic Values

(T

Min. Typ.

Max.

V

F

I

2.7

V

T

1.6

V

I

RM

T

4

A

t

rr

T

100

ns

25

ns

R

thJC

0.90°C/W

I

F

= 30A, V

V

I

F

= 1A, V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

20

33

S

C

3300

pF

C

oes

V

195

pF

C

res

63

pF

Q

g(on)

107

nC

Q

ge

I

28

nC

Q

gc

46

nC

t

d(on)

35

ns

t

ri

75

ns

E

on

1.60

mJ

t

d(off)

90

130

ns

t

fi

75

ns

E

0.80

1.40 mJ

t

d(on)

33

ns

t

ri

72

ns

E

on

2.50

mJ

t

d(off)

105

ns

t

fi

80

ns

E

off

1.07

mJ

R

thJC

0.20 °C/W

R

thCS

0.21

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2