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IXYQ40N65C3D1 Folha de dados(PDF) 2 Page - IXYS Corporation

Nome de Peças IXYQ40N65C3D1
Descrição Electrónicos  Advance Technical Information
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Fabricante Electrônico  IXYS [IXYS Corporation]
Página de início  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYQ40N65C3D1 Folha de dados(HTML) 2 Page - IXYS Corporation

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N65C3D1
IXYQ40N65C3D1
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Notes:
1. Pulse test, t
 300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
e
P
TO-247 (IXYH) Outline
1
2
3
Terminals: 1 - Gate
2 - Collector
3 - Emitted
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
V
F
I
F = 30A, VGE = 0V, Note 1
2.5
V
T
J = 150°C
1.2
V
I
rr
T
J = 150°C
23
A
t
rr
T
J = 150°C
120
ns
R
thJC
0.60 °C/W
I
F = 30A, VGE = 0V,
-di
F/dt = 500A/μs, VR = 400V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 40A, VCE = 10V, Note 1
16
26
S
C
ies
1950
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
205
pF
C
res
40
pF
Q
g(on)
66
nC
Q
ge
I
C = 40A, VGE = 15V, VCE = 0.5 • VCES
13
nC
Q
gc
32
nC
t
d(on)
23
ns
t
ri
40
ns
E
on
0.83
mJ
t
d(off)
110
ns
t
fi
20
ns
E
off
0.36
0.65
mJ
t
d(on)
24
ns
t
ri
40
ns
E
on
1.60
mJ
t
d(off)
130
ns
t
fi
30
ns
E
off
0.53
mJ
R
thJC
0.50 °C/W
R
thCS
0.25
°C/W
Inductive load, T
J = 25°C
I
C = 30A, VGE = 15V
V
CE = 400V, RG = 10
Note 2
Inductive load, T
J = 150°C
I
C = 30A, VGE = 15V
V
CE = 400V, RG = 10
Note 2
TO-3P Outline
1 = Gate
2,4 = Collector
3 = Emitter


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