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SS2412KSOT Folha de dados(PDF) 2 Page - SEC Electronics Inc. |
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SS2412KSOT Folha de dados(HTML) 2 Page - SEC Electronics Inc. |
2 / 9 page SS2412 CMOS High Sensitivity Micropower Hall Latch 2 V3.10 Nov 1, 2013 General Description The SS2412 latching Hall effect sensor IC is fabri- cated from mixed signal CMOS technology. It incor- porates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall ele- ment and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. This device re- quires the presence of both south and north polarity magnetic fields for operation. In the presence of a south polarity field of sufficient strength, the device output latches on, and only switches off when a north polarity field of sufficient strength is present. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been op- timized for service in applications requiring extended operating lifetime in battery powered systems. Glossary of Terms MilliTesla (mT), Gauss Units of magnetic flux density: 1mT = 10 Gauss RoHS Restriction of Hazardous Substances Operating Point (BOP) Magnetic flux density applied on the branded side of the package which turns the output driver ON (VOUT = VDSon) Release Point (BRP) Magnetic flux density applied on the branded side of the package which turns the output driver OFF (VOUT = high) |
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