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SS2412KSOT Folha de dados(PDF) 2 Page - SEC Electronics Inc.

Nome de Peças SS2412KSOT
Descrição Electrónicos  CMOS High Sensitivity Micropower Hall Latch
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Fabricante Electrônico  SECELECTRONICS [SEC Electronics Inc.]
Página de início  http://www.secsemi.com
Logo SECELECTRONICS - SEC Electronics Inc.

SS2412KSOT Folha de dados(HTML) 2 Page - SEC Electronics Inc.

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SS2412
CMOS High Sensitivity Micropower Hall Latch
2
V3.10
Nov 1, 2013
General Description
The SS2412 latching Hall effect sensor IC is fabri-
cated from mixed signal CMOS technology. It incor-
porates advanced chopper-stabilization techniques to
provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled
clocking mechanism to cycle power to the Hall ele-
ment and analog signal processing circuits. This
serves to place the high current-consuming portions
of the circuit into a “Sleep” mode. Periodically the
device is “Awakened” by this internal logic and the
magnetic flux from the Hall element is evaluated
against the predefined thresholds. This device re-
quires the presence of both south and north polarity
magnetic fields for operation. In the presence of a
south polarity field of sufficient strength, the device
output latches on, and only switches off when a north
polarity field of sufficient strength is present.
While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been op-
timized for service in applications requiring extended
operating lifetime in battery powered systems.
Glossary of Terms
MilliTesla (mT), Gauss
Units of magnetic flux density: 1mT = 10 Gauss
RoHS
Restriction of Hazardous Substances
Operating Point (BOP)
Magnetic flux density applied on the branded side of the package
which turns the output driver ON (VOUT = VDSon)
Release Point (BRP)
Magnetic flux density applied on the branded side of the package
which turns the output driver OFF (VOUT = high)


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