LM4946

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SNAS335E – JANUARY 2006 – REVISED AUGUST 2007

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

6.0V

Storage Temperature

−65°C to +150°C

Input Voltage

2.0kV

200V

Junction Temperature

150°C

Soldering Information

Vapor Phase (60 sec.)

215°C

Infrared (15 sec.)

220°C

46°C/W

49°C/W

(1)

Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured

specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.

Some performance characteristics may degrade when the device is not operated under the listed test conditions.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

Human body model, 100pF discharged through a 1.5k

Ω resistor.

(4)

Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage, then

discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50

Ω).

(5)

The given

Operating Ratings

Temperature Range

−40°C to 85°C

2.7V

WQFN

2.2V

DSBGA

1.7V

(1)

Refer to this table.

Copyright © 2006–2007, Texas Instruments Incorporated

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