MTB020N03E3 datasheet(5/8 Pages) CYSTEKEC

Nome de Peças	MTB020N03E3

Descrição Electrónicos	N-Channel Enhancement Mode Power MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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5 / 8 page

CYStech Electronics Corp.

Spec. No. : C737E3

Issued Date : 2016.06.23

Revised Date :

Page No. : 5/8

MTB020N03E3

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

0

5

10

15

20

25

30

VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=250

μA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001

0.01

0.1

1

10

ID, Drain Current(A)

VDS=10V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

02

468

10

12

14

Qg, Total Gate Charge(nC)

VDS=15V

ID=20A

Maximum Safe Operating Area

0.1

1

10

100

1000

0.1

1

10

100

VDS, Drain-Source Voltage(V)

TC=25°C, VGS=10V

RθJC=2.2°C/W, Tj(max)=150°C

Single Pulse

DC

10ms

100ms

1ms

100

μs

10

μs

RDS(ON)

Limited

Maximum Drain Current vs Case Temperature

0

5

10

15

20

25

30

35

40

25

50

75

100

125

150

175

TC, Case Temperature(°C)

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MTB020N03E3 Folha de dados(PDF) 5 Page - Cystech Electonics Corp.

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