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TLC27L1MP Folha de dados(PDF) 24 Page - Texas Instruments |
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TLC27L1MP Folha de dados(HTML) 24 Page - Texas Instruments |
24 / 32 page TLC27L1, TLC27L1A, TLC27L1B LinCMOS LOW POWER OPERATIONAL AMPLIFIERS SLOS154B− DECEMBER 1995 − REVISED JUNE 2005 24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 APPLICATION INFORMATION input characteristics (continued) The use of the polysilicon-gate process and the careful input circuit design gives the TLC27L1 very good input offset-voltage drift characteristics relative to conventional metal-gate processes. Offset-voltage drift in CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset-voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of operation. Because of the extremely high input impedance and resulting low bias-current requirements, the TLC27L1 is well suited for low-level signal processing; however, leakage currents on printed circuit boards and sockets can easily exceed bias-current requirements and cause a degradation in device performance. It is good practice to include guard rings around inputs (similar to those of Figure 36 in the Parameter Measurement Information section). These guards should be driven from a low-impedance source at the same voltage level as the common-mode input (see Figure 41). noise performance The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage differential amplifier. The low-input bias-current requirements of the TLC27L1 results in a very-low noise current, which is insignificant in most applications. This feature makes the devices especially favorable over bipolar devices when using values of circuit impedance greater than 50 k Ω, since bipolar devices exhibit greater noise currents. VI VO VO VO VI VI (a) NONINVERTING AMPLIFIER (b) INVERTING AMPLIFIER (c) UNITY-GAIN AMPLIFIER Figure 41. Guard-Ring Schemes |
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