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MC10E101 Folha de dados(PDF) 4 Page - ON Semiconductor

Nome de Peças MC10E101
Descrição Electrónicos  5V ECL Quad 4?륤nput OR/NOR Gate
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC10E101 Folha de dados(HTML) 4 Page - ON Semiconductor

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MC10E101, MC100E101
www.onsemi.com
4
Table 6. 100E SERIES NECL DC CHARACTERISTICS (VCCx = 0.0 V; VEE = −5.0 V (Note 1))
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
30
36
30
36
35
42
mA
VOH
Output HIGH Voltage (Note 2)
−1025
−950
−880
−1025
−950
−880
−1025
−950
−880
mV
VOL
Output LOW Voltage (Note 2)
−1810 −1705 −1620 −1810 −1745 −1620 −1810 −1740 −1620
mV
VIH
Input HIGH Voltage
−1165 −1025
−880
−1165 −1025
−880
−1165 −1025
−880
mV
VIL
Input LOW Voltage
−1810 −1645 −1475 −1810 −1645 −1475 −1810 −1645 −1475
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.3
0.5
0.25
0.5
0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
Table 7. AC CHARACTERISTICS (VCCx = 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 1))
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
fMAX
Maximum Toggle Frequency
700
700
700
MHz
tPLH
tPHL
Propagation Delay to Output
D to Q
300
450
600
300
450
600
300
450
600
ps
tSKEW
Within-Device Skew (Note 2)
Within-Gate Skew (Note 3)
50
25
50
25
50
25
ps
tJITTER
Random Clock Jitter (RMS)
< 1
< 1
< 1
ps
tr
tf
Rise/Fall Time
(20 - 80%)
275
380
575
300
380
575
275
380
575
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. 10 Series: VEE can vary −0.46 V / +0.06 V.
100 Series: VEE can vary −0.46 V / +0.8 V.
2. Within-device skew is defined as identical transitions on similar paths through a device.
3. Within-gate skew is defined as the variation in propagation delays of a gate when driven from its different inputs.


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