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SI1501DL Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI1501DL Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si1501DL Vishay Siliconix www.vishay.com 2 Document Number: 71303 S-03840—Rev. B, 21-May-01 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA N-Ch 20 24 Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −10 mA P-Ch −20 −24 V Gate Threshold Voltage VGS( h) VDS = VGS, ID = 50 mA N-Ch 0.4 0.9 1.5 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = −50 mA P-Ch −0.4 −0.9 −1.5 Gate Body Leakage IGSS VDS = 0 V VGS = "8 V N-Ch "2 "100 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V P-Ch "2 "100 nA VDS = 20 V, VGS = 0 V N-Ch 0.001 100 nA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V P-Ch −0.001 −100 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55_C N-Ch 1 mA VDS = −20 V, VGS = 0 V, TJ = 55_C P-Ch −1 mA VDS w 2.5 V, VGS = 5.0 V N-Ch 120 On State Drain Currenta ID( ) VDS v −2.5 V, VGS = −5.0 V P-Ch −120 mA On-State Drain Currenta ID(on) VDS w 4.5 V, VGS = 8.0 V N-Ch 400 mA VDS v −4.5 V, VGS = −8.0 V P-Ch −400 VGS = 2.5 V, ID = 150 mA N-Ch 1.6 2.5 Drain Source On State Resistancea rDS( ) VGS = −2.5 V, ID = −75 mA P-Ch 4 5 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 250 mA N-Ch 1.2 2.0 W VGS = −4.5 V, ID = −180 mA P-Ch 2.6 3.8 Forward Transconductancea gf VDS = 2.5 V, ID = 50 mA N-Ch 150 mS Forward Transconductancea gfs VDS = −2.5 V, ID = − 50 mA P-Ch 200 mS Diode Forward Voltagea VSD IS = 50 mA, VGS = 0 V N-Ch 0.7 1.2 V Diode Forward Voltagea VSD IS = −50 mA, VGS = 0 V P-Ch −0.7 −1.2 V Dynamicb Total Gate Charge Q N-Ch 300 450 Total Gate Charge Qg N-Channel P-Ch 300 450 Gate Source Charge Q N-Channel VDS = 5 V, VGS = 4.5 V, ID = 100 mA N-Ch 25 pC Gate-Source Charge Qgs P-Channel V V V V I 100 A P-Ch 25 pC Gate Drain Charge Q d P Channel VDS = −5 V, VGS = −4.5 V, ID = −100 mA N-Ch 100 Gate-Drain Charge Qgd P-Ch 100 Input Capacitance Ci N-Ch 15 Input Capacitance Ciss N-Channel P-Ch 15 Output Capacitance C N-Channel VDS = 5 V, VGS = 0 V N-Ch 11 pF Output Capacitance Coss P-Channel V V V 0 V P-Ch 11 pF Reverse Transfer Capacitance C P Channel VDS = −5 V, VGS = 0 V N-Ch 5 Reverse Transfer Capacitance Crss P-Ch 5 Switching Turn On Time td( ) N-Ch 7 12 Turn-On Time td(on) N Channel P-Ch 7 12 Rise Time t N-Channel VDD = 3 V, RL = 100 W N-Ch 25 35 Rise Time tr VDD = 3 V, RL = 100 W ID = 0.25 A, VGEN = 4.5 V, Rg = 10 W P-Ch 25 35 ns Turn Off Delay Time td( ff) g P-Channel V 3 V R 100 W N-Ch 19 30 ns Turn-Off Delay Time td(off) P Channel VDD = −3 V, RL = 100 W ID = -0.25 A, VGEN = −4.5 V, Rg = 10 W P-Ch 19 30 Fall Time tf ID = -0.25 A, VGEN = −4.5 V, Rg = 10 W N-Ch 9 15 Fall Time tf P-Ch 9 15 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. |
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