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LM2524DN Folha de dados(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Nome de Peças LM2524DN
Descrição Electrónicos  Regulating Pulse Width Modulator
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Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2524DN Folha de dados(HTML) 4 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
(Note 1)
LM2524D
LM3524D
Symbol
Parameter
Conditions
Tested
Design
Tested
Design
Units
Typ
Limit
Limit
Typ
Limit
Limit
(Note 3)
(Note 4)
(Note 3)
(Note 4)
Sawtooth Valley
R
T = 5.6k, CT = 0.01 µF
1.1
0.8
0.6
0.6
V
Min
Voltage
ERROR-AMP SECTION
V
IO
Input Offset
V
CM = 2.5V
2
8
10
210
mV
Max
Voltage
I
IB
Input Bias
V
CM = 2.5V
1
8
10
110
µA
Max
Current
I
IO
Input Offset
V
CM = 2.5V
0.5
1.0
1
0.5
1
µA
Max
Current
I
COSI
Compensation
V
IN(I) −VIN(NI) = 150 mV
65
65
µA
Min
Current (Sink)
95
95
125
125
µA
Max
I
COSO
Compensation
V
IN(NI) −VIN(I) = 150 mV
−125
−125
µA
Min
Current (Source)
−95
−95
−65
−65
µA
Max
A
VOL
Open Loop Gain
R
L = ,VCM = 2.5 V
80
74
60
80
70
60
dB
Min
VCMR
Common Mode
1.5
1.4
1.5
V
Min
Input Voltage
Range
5.5
5.4
5.5
V
Max
CMRR
Common Mode
90
80
90
80
dB
Min
Rejection Ratio
G
BW
Unity Gain
A
VOL = 0 dB, VCM = 2.5V
3
2
MHz
Bandwidth
V
O
Output Voltage
R
L =
0.5
0.5
V
Min
Swing
5.5
5.5
V
Max
PSRR
Power Supply
V
IN = 8 to 40V
80
70
80
65
db
Min
Rejection Ratio
COMPARATOR SECTION
Minimum Duty
Pin 9 = 0.8V,
00
0
0
%
Max
Cycle
[R
T = 5.6k, CT = 0.01 µF]
Maximum Duty
Pin 9 = 3.9V,
49
45
49
45
%
Min
Cycle
[R
T = 5.6k, CT = 0.01 µF]
Maximum Duty
Pin 9 = 3.9V,
44
35
44
35
%
Min
Cycle
[R
T = 1k, CT = 0.001 µF]
V
COMPZ
Input Threshold
Zero Duty Cycle
1
1
V
(Pin 9)
V
COMPM
Input Threshold
Maximum Duty Cycle
3.5
3.5
V
(Pin 9)
I
IB
Input Bias
−1
−1
µA
Current
CURRENT LIMIT SECTION
V
SEN
Sense Voltage
V
(Pin 2) −V(Pin 1)
180
180
mV
Min
150 mV
200
200
220
220
mV
Max
www.national.com
4


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