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MC14049UBDR2G Folha de dados(PDF) 1 Page - ON Semiconductor

Nome de Peças MC14049UBDR2G
Descrição Electrónicos  Hex Buffers
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC14049UBDR2G Folha de dados(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 9
1
Publication Order Number:
MC14049UB/D
MC14049UB
Hex Buffers
The MC14049UB hex inverter/buffer is constructed with MOS
P−channel and N−channel enhancement mode devices in a single
monolithic structure. This complementary MOS device finds primary
use where low power dissipation and/or high noise immunity is
desired. This device provides logic−level conversion using only one
supply voltage, VDD. The input−signal high level (VIH) can exceed the
VDD supply voltage for logic−level conversions. Two TTL/DTL
Loads can be driven when the device is used as CMOS−to−TTL/DTL
converters (VDD = 5.0 V, VOL
v 0.4 V, IOL ≥ 3.2 mA). Note that pins
13 and 16 are not connected internally on this device; consequently
connections to these terminals will not affect circuit operation.
Features
High Source and Sink Currents
High−to−Low Level Converter
Supply Voltage Range = 3.0 V to 18 V
Meets JEDEC UB Specifications
VIN can exceed VDD
Improved ESD Protection on All Inputs
These Devices are Pb−Free and are RoHS Compliant
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
MAXIMUM RATINGS (Voltages Referenced to VSS)
Symbol
Parameter
Value
Unit
VDD
DC Supply Voltage Range
− 0.5 to +18.0
V
Vin
Input Voltage Range
(DC or Transient)
− 0.5 to +18.0
V
Vout
Output Voltage Range
(DC or Transient)
−0.5 to VDD
+0.5
V
Iin
Input Current
(DC or Transient) per Pin
±10
mA
Iout
Output Current
(DC or Transient) per Pin
+45
mA
PD
Power Dissipation, per Package (Note 1)
Plastic
SOIC
825
740
mW
TA
Ambient Temperature Range
− 55 to +125
°C
Tstg
Storage Temperature Range
− 65 to +150
°C
TL
Lead Temperature (8−Second Soldering)
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: All Packages: See Figure 4.
This device contains circuitry to protect the inputs against damage due to high
static voltages or electric fields referenced to the VSS pin, only. Extra precautions
must be taken to avoid applications of any voltage higher than the maximum rated
voltages to this high−impedance circuit. For proper operation, the ranges
VSS v Vin v 18 V and VSS v Vout v VDD are recommended.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either VSS or VDD). Unused outputs must be left open.
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING
DIAGRAMS
SOIC−16
D SUFFIX
CASE 751B
TSSOP−16
DT SUFFIX
CASE 948F
14049UG
AWLYWW
SOEIAJ−16
F SUFFIX
CASE 966
MC14049UB
ALYWG
1
16
1
16
14
049UB
ALYW
G
G
1
16
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W
= Work Week
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)


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