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BA3123F Folha de dados(PDF) 9 Page - Rohm

Nome de Peças BA3123F
Descrição Electrónicos  Ground Isolation Amplifier
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Fabricante Electrônico  ROHM [Rohm]
Página de início  http://www.rohm.com
Logo ROHM - Rohm

BA3123F Folha de dados(HTML) 9 Page - Rohm

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BA3123F
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TSZ02201-0C2C0EZ00400-1-2
© 2015 ROHM Co., Ltd. All rights reserved.
13.Nov.2015 Rev.001
www.rohm.com
TSZ22111・15・001
Operational Notes
– continued
12.
Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 15. Example of monolithic IC structure
13.
The capacitors of Pin2 (VM1), and Pin 6 (VM2) should maintain the ratio of 2:1 for ripple rejection characteristics.
Maintaining this ratio will prevent the significant decrease on ripple rejection even if the capacitance is reduced to half.
14.
Setting the capacitor value to twice or half will make CMRR +6dB or -6dB respectively (Figure 10) in the low frequency
range.
N
N
P
+
P
N
N
P
+
P Substrate
GND
N
P
+
N
N
P
+
N P
P Substrate
GND
GND
Parasitic
Elements
Pin A
Pin A
Pin B
Pin B
B
C
E
Parasitic
Elements
GND
Parasitic
Elements
C
B
E
Transistor (NPN)
Resistor
N Region
close-by
Parasitic
Elements


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