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2SC1583 Folha de dados(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2SC1583 Folha de dados(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 3 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate Transistors 2SC1583 DUAL TRANSISTOR (NPN+NPN) FEATURE Excellent Linearity of DC Gain Low Noise High hFE APPLICATION Differential Amplifier Circuit Pre-amplification Circuit Noise Suppression Circuit Voice Control Circuit MARKING MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.1 A PC Collector Power Dissipation 0.35 W RΘJA Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=100µA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 µA Collector cut-off current ICEO VCE=35V, IB=0 10 µA Emitter cut-off current IEBO VEB=2V, IC=0 0.1 µA DC current gain hFE VCE=2V, IC=1mA 250 600 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.6 V Base-emitter voltage differential |VBE1-VBE2| VCE=6V,IC=1mA 10 mV DC current gain ratio hFE1/hFE2* VCE=6V,IC=1mA 0.8 1 Transition frequency fT VCE=6V,IC=1mA 150 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 2.5 pF Noise figure NF VCE=6V, IE=-0.1mA, f=1kHz, RG=10 kΩ 0.5 dB * The lower hFE of two components as hFE1. SOT-23-6L PIN1 www.cj-elec.com 1 C,May,2015 Equivalent Circuit |
Nº de peça semelhante - 2SC1583 |
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Descrição semelhante - 2SC1583 |
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