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MLX92211 Folha de dados(PDF) 4 Page - Melexis Microelectronic Systems

Nome de Peças MLX92211
Descrição Electrónicos  3-Wire Hall Effect Latch
Download  13 Pages
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Fabricante Electrônico  MELEXIS [Melexis Microelectronic Systems]
Página de início  http://www.melexis.com
Logo MELEXIS - Melexis Microelectronic Systems

MLX92211 Folha de dados(HTML) 4 Page - Melexis Microelectronic Systems

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MLX92211-AxA
3-Wire Hall Effect Latch
390109221101
Page 4 of 13
Datasheet
Rev. 007
www.melexis.com
Jan/15
5 General Electrical Specifications
DC Operating Parameters TA = -40°C to 150°C, VDD = 2.7V to 24V (unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
(1)
Max
Units
Supply Voltage
VDD
Operating
2.7
-
24
V
Supply Current
IDD
1.5
3.0
4.5
mA
Reverse Supply Current
IDDREV
VDD = -18V
1
mA
Output Leakage Current
IOFF
VOUT = 12V, VDD = 12V, B < Brp
0.1
10
µA
Output Saturation Voltage
VDSon
B > BOP, VDD = 3.8 to 18V, IOUT =
20mA
0.2
0.5
V
Output Rise Time
(2)
(RPU dependent)
tR
VDD = 12V, VPU
(3) = 5V, R
PU = 1kΩ
CLOAD = 50pF to GND
0.1
0.3
1
µs
Output Fall Time
(2)
(On-chip controlled)
tF
VDD = 12V, VPU = 5V, RPU = 1kΩ
CLOAD = 50pF to GND
0.1
0.3
1
µs
Output Current Limit
ICL
B > BOP, VDD=3.8 to 18V, VOUT = 12V
22
40
70
mA
Output ON Time under Current
Limit conditions
(4)
tCLON
B > BOP, VPU = 12V, RPU = 100Ω
150
240
µs
Output OFF Time under Current
Limit conditions
(4)
tCLOFF
B > BOP, VPU = 12V, RPU = 100Ω
3.5
ms
Chopping Frequency
fCHOP
340
kHz
Output Refresh Period
(2)
tPER
6
µs
Delay time
(2,5)
tD
Average over 1000 successive
switching events @10kHz, square
wave with B≥30mT, tRISE=tFALL≤20μs
6
µs
Output Jitter (p-p)
(2, 6)
tJITTER
Over 1000 successive switching
events @1kHz, square wave with
B≥30mT, tRISE=tFALL ≤100μs
±3
µs
Maximum Switching Frequency
(2,7)
fSW
B
≥30mT and square wave magnetic
field
30
50
kHz
Power-On Time
(8,9)
tON
VDD = 5V, dVDD/dt > 2V/us
16
35
μs
Under-voltage Lockout Threshold
VUVL
2.2
2.4
2.7
V
Under-voltage Lockout Reaction
time
(2)
tUVL
1
µs
Thermal Protection Threshold
(10)
TPROT
Junction temperature
185
°C
Thermal Protection Release
(10)
TREL
Junction temperature
170
°C
SE Package Thermal Resistance
RTH
Single layer (1S) Jedec board
300
°C/W
UA Package Thermal Resistance
RTH
Single layer (1S) Jedec board
200
°C/W
Table 1: Electrical specifications
1 Typical values are defined at T
A = +25°C and VDD = 12V, unless otherwise specified
2 Guaranteed by design and verified by characterization, not production tested
3 R
PU and VPU are respectively the external pull-up resistor and pull-up power supply
4 If the Output is in Current Limitation longer than t
CLON the Output is switched off in high-impedance state. The Output returns back in active state at next reaching of BOP or after
tCLOFF time interval
5 The Delay Time is the time from magnetic threshold reached to the start of the output switching
6 Output jitter is the unpredictable deviation of the Delay time
7 Maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected without loss of pulses
8 The Power-On Time represents the time from reaching V
DD = VPOR to the first refresh of the output (first valid output state)
9 Power-On Slew Rate is not critical for the proper device start-up
10 T
PROT and TREL are the corresponding junction temperature values.


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