2SA1797U datasheet(1/3 Pages) SEMTECH_ELEC

Nome de Peças	2SA1797U

Descrição Electrónicos	PNP Silicon Epitaxial Planar Transistor

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Fabricante Electrônico	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

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Dated：31/05/2016

Rev：01

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SEMTECH ELECTRONICS LTD.

2SA1797U

PNP Silicon Epitaxial Planar Transistor

Medium power transistor

Absolute Maximum Ratings (Ta = 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

-VCBO

50

V

Collector Emitter Voltage

-VCEO

50

V

Emitter Base Voltage

-VEBO

6

V

Collector Current

-IC

2

A

Collector Current (Pw = 20 ms)

-ICP

3

A

Collector Power Dissipation

PC

0.5

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

- 55 to + 150

℃

Characteristics at Ta = 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 2 V, -IC = 500 mA

Current Gain Group

P

Q

R

hFE

82

120

180

-

180

270

390

-

Collector Base Cutoff Current

at -VCB = 50 V

-ICBO

-

100

nA

Emitter Base Cutoff Current

at -VEB = 5 V

-IEBO

-

100

nA

Collector Base Breakdown Voltage

at -IC = 50 µA

-V(BR)CBO

50

-

V

Collector Emitter Breakdown Voltage

at -IC = 1 mA

-V(BR)CEO

50

-

V

Emitter Base Breakdown Voltage

at -IE = 50 µA

-V(BR)EBO

6

-

V

Collector Emitter Saturation Voltage

at -IC = 1 A, -IB = 50 mA

-VCE(sat)

-

0.35

V

Transition Frequency

at -VCE = 2 V, -IC = 500 mA, f = 100 MHz

fT

-

200

-

MHz

Collector Output Capacitance

at -VCB = 10 V, f = 1 MHz

Cob

-

36

-

pF

Nº de peça semelhante - 2SA1797U

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Rohm	2SA1797	99Kb / 3P	Power Transistor (-50V, -3A)
GUANGDONG HOTTECH INDUS...	2SA1797	192Kb / 2P	Plastic-Encapsulate Transistors
Unisonic Technologies	2SA1797	43Kb / 2P	POWER TRANSISTOR
Galaxy Semi-Conductor H...	2SA1797	279Kb / 5P	PNP Silicon Epitaxial Planar Transistor
Rohm	2SA1797	97Kb / 3P	Power Transistor (−50V, −3A)

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Descrição semelhante - 2SA1797U

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Galaxy Semi-Conductor H...	MMSTA92	131Kb / 2P	PNP Silicon Epitaxial Planar Transistor
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