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S-1004NB10I-I6T1U Folha de dados(PDF) 11 Page - Seiko Instruments Inc

Nome de Peças S-1004NB10I-I6T1U
Descrição Electrónicos  Release delay time accuracy
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Fabricante Electrônico  SII [Seiko Instruments Inc]
Página de início  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

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BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN
Rev.2.1_01
S-1004 Series
11
2. CMOS output product
Table 12
(Ta =
+25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection voltage*1
−VDET
0.95 V
≤ VDD ≤ 10.0 V
1.0 V
≤ −VDET(S) < 2.2 V
−VDET(S)
− 0.022
−VDET(S)
−VDET(S)
+ 0.022
V
1
2.2 V
≤ −VDET(S) ≤ 5.0 V
−VDET(S)
× 0.99
−VDET(S)
−VDET(S)
× 1.01
V
1
Hysteresis width
VHYS
−VDET
× 0.03
−VDET
× 0.05
−VDET
× 0.07
V
1
Current
consumption*2
ISS
VDD = 10.0 V, VSENSE =
−VDET(S) + 1.0 V
0.50
0.90
μA
2
Operation voltage VDD
0.95
10.0
V
1
Output current
IOUT
Output transistor
Nch
VDS*3 = 0.5 V
VSENSE = 0.0 V
VDD = 0.95 V
0.59
1.00
mA
3
VDD = 1.2 V
0.73
1.33
mA
3
VDD = 2.4 V
1.47
2.39
mA
3
VDD = 4.8 V
1.86
2.50
mA
3
Output transistor
Pch
VDD = 4.8 V
1.62
2.60
mA
5
VDS*3 = 0.5 V
VSENSE = 10.0 V
VDD = 6.0 V
1.78
2.86
mA
5
Detection voltage
temperature
coefficient*4
Δ−VDET
ΔTa • −VDET Ta = −40°C to +85°C
±100
±350 ppm/°C
1
Detection
delay time*5
tDET
VDD = 5.0 V
40
μs
4
Release
delay time*6
tRESET
VDD =
−VDET(S) + 1.0 V, CD = 4.7 nF
10.79
12.69
14.59
ms
4
SENSE pin
resistance
RSENSE
1.0 V
≤ −VDET(S) < 1.2 V
5.0
19.0
42.0
M
Ω
2
1.2 V
≤ −VDET(S) ≤ 5.0 V
6.0
30.0
98.0
M
Ω
2
*1.
−VDET: Actual detection voltage value, −VDET(S): Set detection voltage value (the center value of the detection voltage
range in Table 5 or Table 6)
*2.
The current flowing through the SENSE pin resistance is not included.
*3.
VDS: Drain-to-source voltage of the output transistor
*4.
The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ−VDET
ΔTa
[]
mV/°C *1 =
−VDET(S) (typ.)[]
V *2
×
Δ−VDET
ΔTa • −VDET []
ppm/°C *3
÷ 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
*5.
The time period from when the pulse voltage of 6.0 V
→ −VDET(S) − 2.0 V or 0 V is applied to the SENSE pin to when
VOUT reaches VDD / 2.
*6.
The time period from when the pulse voltage of 0.95 V
→ 10.0 V is applied to the SENSE pin to when VOUT reaches
VDD
× 90%.


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