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LM494IN Folha de dados(PDF) 3 Page - National Semiconductor (TI) |
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LM494IN Folha de dados(HTML) 3 Page - National Semiconductor (TI) |
3 / 8 page LM494 Electrical Characteristics TA e 0 Cto a70 C for the LM494C TA eb40 Cto a85 C for the LM494I VCC e 15V fOSC e 10 kHz unless otherwise specified (Continued) Symbol Parameter Conditions Min Typ Max Units PWM COMPARATOR SECTION (Figure 9) VTHI Inhibit Threshold Voltage Zero Duty Cycle 40 45 V IOb Output Sink Current 05V s V3 s 35V b 02 b 06 mA (Note 4) IOa Output Source Current 05V s V3 s 35V 20 mA (Note 4) OUTPUT SECTION VCE(sat) Output Saturation VE e 0V 0 C s TA s a70 C Voltage Common Emitter IC e 200 mA b 40 C s TA s a85 C 11 13 Configuration (Figure 3) V Emitter Follower VC e 15V IE e 200 mA 15 25 Configuration (Figure 4) IC(off) Collector Off-State Current VCC e 40V VCE e 40V 20 100 m A IE(off) Emitter Off-State Current VCC e VC e 40V 0 C s TA s a70 C b 100 m A VE e 0 b 40 C s TA s a85 C OUTPUT CONTROL (Figure 6) VOCL Output Control Voltage Required for Single Ended or 04 V Parallel Output Operation VOCH Output Control Voltage Required for Push-Pull 24 V Operation TOTAL DEVICE ICC Standby Power Supply Current 60 10 mA OUTPUT AC CHARACTERISTICS Use Recommended Operating Conditions with TA e 25 C tr Rise Time of Output Voltage Common Emitter Configuration 100 200 (Figure 3) ns Emitter Follower Configuration 100 200 (Figure 4) tf Fall Time of Output Voltage Common Emitter Configuration 25 100 (Figure 3) ns Emitter Follower Configuration 40 100 (Figure 4) Note 1 TJ Max e 150 C for the Molded DIP and 175 C for the Ceramic DIP Note 2 Ratings apply to ambient temperature at 25 C Above this temperature derate the 16L-Ceramic DIP at 10 mW C and the 16L-Molded DIP at 83 mW C Note 3 Selected devices with tightened tolerance reference voltage available Note 4 These limits apply when the voltage measured at Lead 3 is within the range specified 3 |
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Descrição semelhante - LM494IN |
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