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MB85R4M2TFN-G Folha de dados(PDF) 6 Page - Fujitsu Component Limited.

Nome de Peças MB85R4M2TFN-G
Descrição Electrónicos  4 M (256 K 횞 16) Bit
Download  23 Pages
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Fabricante Electrônico  FUJITSU [Fujitsu Component Limited.]
Página de início  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MB85R4M2TFN-G Folha de dados(HTML) 6 Page - Fujitsu Component Limited.

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DS501-00024-4v0-E
MB85R4M2T
 ABABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Min
Max
Power Supply Voltage*
VDD
− 0.5
+ 4.0
V
Input Pin Voltage*
VIN
− 0.5
VDD + 0.5 (
≤ 4.0)
V
Output Pin Voltage*
VOUT
− 0.5
VDD + 0.5 (
≤ 4.0)
V
Operation Ambient Temperature
TA
− 40
+ 85
°C
Storage Temperature
Tstg
− 55
+ 125
°C
* : All voltages are referenced to VSS (ground 0 V).
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage,
current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these
ratings.
 RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Value
Unit
Min
Typ
Max
Power Supply Voltage*1
VDD
1.8
3.3
3.6
V
Operation Ambient Temperature*2
TA
− 40
+ 85
°C
*1: All voltages are referenced to VSS (ground 0 V).
*2: Ambient temperature when only this device is working. Please consider it to be the almost same as the
package surface temperature.
WARNING: The recommended operating conditions are required in order to ensure the normal
operation of the semiconductor device. All of the device's electrical characteristics are
warranted when the device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition
ranges. Operation outside these ranges may adversely affect reliability and could result
in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not
represented on the data sheet. Users considering application outside the listed
conditions are advised to contact their representatives beforehand.


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