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K1050G Folha de dados(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Nome de Peças K1050G
Descrição Electrónicos  SIDAC
Download  5 Pages
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Fabricante Electrônico  BILIN [Galaxy Semi-Conductor Holdings Limited]
Página de início  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

K1050G Folha de dados(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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background image
+I
-V
+V
IT
IH
IS
IBO
IDRM
VT
VDRM
VS
VBO
RS
(VBO
-VS)
(
IS-IBO)
RS
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS MaximumRated
Value at Specified Junction Temperature
BLOCKING CAPABILITY MAY BE LOST
DURING ANDIMMEDIATELY
FOLLOWINGSURGE CURRENT
INTERVAL
OVERLOADMAY NOT BE REPEATED
UNTIL JUNCTIONTEMPERATURE
HAS RETURNED TOSTEADY-STATE
RATED VALUE.
1.0
10
1000
100
1.0
2.0
40
100
4.0
10
8.0
6.0
20
Surge Current Duration - Full Cycles
www.galaxycn.com
BLGALAXY ELECTRICAL
Document Number 029000
1
2.
(9) For best Sidac operation, the load impedance should be near or
less than sw itching resistance.
R
S — Sw itching resistance
R
S=
50/60 Hz sine w ave
(V
BO-VS)
◇ All measurements are made at 60Hz w ith a resistive load at an
of this catalog.
◇ Junction temperature range (TJ) is -40°C to +125°C.
◇ Lead solder temperature is a maximum of +230°C for 10 seconds
ambient temperature of +25°C unless otherw ise specified.
V
DRM — Repetitive peak off-state voltage
(I
S-IBO)
V
BO — Breakover voltage 50/60 Hz sine w ave
maximum; ≥ 1/16" (1.59mm) fromcase.
◇ Storage temperature range (TS) is -65°C to +150°C.
◇ The case (TC) or lead (TL) temperature is measured as show n on
the dimensional outline draw ings. See “Package Dimensions” section
V
TM — Peak on-state voltage, IT = 1 Amp
General Notes
I
DRM — Repetitive peak off-state current 50/60 Hz sine w ave; V = VDRM
(5) See Figure 9.1 for more than one full cycle rating.
I
H — Dynamic holding current 50/60 Hz sine w ave; R = 100Ω
(6) R
θJA Type 41 is 70° C/W.
I
T(RMS) — On-state RMS current TJ ≤ 125°C 50/60 Hz sine w ave
(7) T
L ≤ 100°C
I
TSM — Peak one cycle surge current 50/60 Hz sine w ave (nonrepetitive)
(8) See Figure 9.14 for clarification of Sidac operation.
Specific Test Conditions
Electrical Specification Notes
di/dt — Critical rate-of-rise of on-state current
(1) See Figure 9.5 for V
BO change vs junction temperature.
100°C
(3) See Figure 9.2 for I
H vs case temperature.
I
BO — Breakover current 50/60 Hz sine w ave
(4) See Figure 9.13 for test circuit.
(2) See Figure 9.6 for IBO vs junction temperature.
dv/dt — Critical rate-of-rise of off-state voltage at rated V
DRM; TJ
RATINGS AND CHARACTERISTIC CURVES
KG --- SERIES
V-I CHARACTERISTICS
FIG.1-- PEAK SURGE CURRENT vs SURGE CURRENT
FFFFFFFF DURATION


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