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KM23C4100DT Folha de dados(PDF) 1 Page - Samsung semiconductor

Nome de Peças KM23C4100DT
Descrição Electrónicos  4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM23C4100DT Folha de dados(HTML) 1 Page - Samsung semiconductor

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KM23C4100D(E)T
CMOS MASK ROM
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
PRODUCT INFORMATION
Product
Operating
Temp
Vcc
Range
Speed
(ns)
KM23C4100DT
0
°C~70°C
5.0V
80
KM23C4100DET
-20
°C~85°C
The KM23C4100D(E)T is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 524,288 x 8 bit(byte mode) or as
262,144 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor,
and data memory, character generator.
The KM23C4100D(E)T is packaged in a 44-TSOP2.
GENERAL DESCRIPTION
FEATURES
• Switchable organization
524,288 x 8(byte mode)
262,144 x 16(word mode)
• Fast access time : 80ns(Max.)
• Supply voltage : single +5V
• Current consumption
Operating : 50mA(Max.)
Standby
: 50
µA(Max.)
• Fully static operation
• All inputs and outputs TTL compatible
• Three state outputs
• Package
-. KM23C4100D(E)T : 44-TSOP2-400
Pin Name
Pin Function
A0 - A17
Address Inputs
Q0 - Q14
Data Outputs
Q15 /A-1
Output 15(Word mode)/
LSB Address(Byte mode)
BHE
Word/Byte selection
CE
Chip Enable
OE
Output Enable
VCC
Power(+5V)
VSS
Ground
N.C
No Connection
A17
X
AND
DECODER
BUFFERS
A0
Y
AND
DECODER
BUFFERS
MEMORY CELL
SENSE AMP.
CONTROL
LOGIC
MATRIX
(262,144x16/
524,288x8)
DATA OUT
BUFFERS
A-1
CE
OE
BHE
.
.
.
.
.
.
.
.
Q0/Q8
Q7/Q15
. . .
PIN CONFIGURATION
N.C
N.C
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
VSS
OE
Q0
Q8
Q1
Q9
Q4
Q12
Q5
Q13
Q6
VSS
Q14
Q7
Q15/A-1
KM23C4100D(E)T
FUNCTIONAL BLOCK DIAGRAM
1
2
44
43
3
4
42
41
5
6
40
39
7
8
38
37
9
10
36
35
11
12
34
33
13
14
32
31
15
16
30
29
17
18
28
27
19
20
26
25
21
22
24
23
TSOP
Q2
Q10
Q3
Q11
N.C
N.C
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
VCC


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