TC1300VUA datasheet(3/16 Pages) MICROCHIP

Nome de Peças	TC1300VUA

Descrição Electrónicos	300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function

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Fabricante Electrônico	MICROCHIP [Microchip Technology]

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 2002 Microchip Technology Inc.

DS21385C-page 3

TC1300

Dropout Voltage (Note 4)

VIN –VOUT

—1

70

210

30

130

390

mV

IL = 0.1 mA

IL = 100 mA

IL = 300 mA

Supply Current

ISS1

—80

160

µA

SHDN = VIH

Shutdown Supply Current

ISS2

—30

60

µA

SHDN = 0V

Power Supply Rejection Ratio

PSRR

—

60

—

dB

f

≤ 1 kHz, CBYPASS = 1 nF

Output Short Circuit Current

IOUTSC

—

800

1200

mA

VOUT = 0V

Thermal Regulation

∆VOUT/∆PD

—

0.04

—

%/W

Note 5

Output Noise

eN

—

900

—

nV/Hz

f < 1 kHz, COUT = 1 µF,

RLOAD = 50 Ω,

CBYPASS = 1 nF

Wake-Up Time

(from Shutdown Mode)

tWK

—10

20

µsec

CIN = 1 µF, VIN = 5V,

COUT = 4.7 µF, IL = 30 mA,

See Figure 3-2

Settling Time

(from Shutdown Mode)

ts

—

50

—

µsec

CIN = 1 µF, VIN = 5V

COUT = 4.7 µF

IL = 30 mA, See Figure 3-2

Thermal Shutdown Die

Temperature

TSD

—150

—

°C

Thermal Shutdown Hysteresis

THYS

—10

—

°C

Thermal Resistance Junction to

Case

RthetaJA

—

200

—

°C/Watt EIA/JEDEC JESD51-751-7 4-

Layer Board

SHDN Input High Threshold

VIH

45

——

%VIN VIN = 2.5V to 6.0V

SHDN Input Low Threshold

VIL

——

15

%VIN

VIN = 2.5V to 6.0V

ELECTRICAL CHARACTERISTICS (CONTINUED)

VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply

for junction temperature (Note 8) of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1: VR is the regulator output voltage setting.

2:

3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested

over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating

effects are covered by the thermal regulation specification.

4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value

measured at a 1V differential.

5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,

excluding load or line regulation effects. Specifications are for a current pulse equal to IL

MAX

at VIN = 6V for t = 10 msec.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-

perature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissi-

pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data

sheet for more details.

7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + VDROPOUT).

8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature

equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature

over the ambient temperature is not significant.

TCVOUT

VOUTMAX VOUTMIN

–

() 10

6

×

VOUT

T

∆

×

--------------------------------------------------------------------------------------

=

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