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TC1300VUA Folha de dados(PDF) 3 Page - Microchip Technology |
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TC1300VUA Folha de dados(HTML) 3 Page - Microchip Technology |
3 / 16 page 2002 Microchip Technology Inc. DS21385C-page 3 TC1300 Dropout Voltage (Note 4) VIN –VOUT —1 70 210 30 130 390 mV IL = 0.1 mA IL = 100 mA IL = 300 mA Supply Current ISS1 —80 160 µA SHDN = VIH Shutdown Supply Current ISS2 —30 60 µA SHDN = 0V Power Supply Rejection Ratio PSRR — 60 — dB f ≤ 1 kHz, CBYPASS = 1 nF Output Short Circuit Current IOUTSC — 800 1200 mA VOUT = 0V Thermal Regulation ∆VOUT/∆PD — 0.04 — %/W Note 5 Output Noise eN — 900 — nV/Hz f < 1 kHz, COUT = 1 µF, RLOAD = 50 Ω, CBYPASS = 1 nF Wake-Up Time (from Shutdown Mode) tWK —10 20 µsec CIN = 1 µF, VIN = 5V, COUT = 4.7 µF, IL = 30 mA, See Figure 3-2 Settling Time (from Shutdown Mode) ts — 50 — µsec CIN = 1 µF, VIN = 5V COUT = 4.7 µF IL = 30 mA, See Figure 3-2 Thermal Shutdown Die Temperature TSD —150 — °C Thermal Shutdown Hysteresis THYS —10 — °C Thermal Resistance Junction to Case RthetaJA — 200 — °C/Watt EIA/JEDEC JESD51-751-7 4- Layer Board SHDN Input High Threshold VIH 45 —— %VIN VIN = 2.5V to 6.0V SHDN Input Low Threshold VIL —— 15 %VIN VIN = 2.5V to 6.0V ELECTRICAL CHARACTERISTICS (CONTINUED) VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply for junction temperature (Note 8) of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Note 1: VR is the regulator output voltage setting. 2: 3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to IL MAX at VIN = 6V for t = 10 msec. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissi- pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data sheet for more details. 7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + VDROPOUT). 8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. TCVOUT VOUTMAX VOUTMIN – () 10 6 × VOUT T ∆ × -------------------------------------------------------------------------------------- = |
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