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UPD48576118F1 Folha de dados(PDF) 1 Page - Renesas Technology Corp

Nome de Peças UPD48576118F1
Descrição Electrónicos  576M-BIT Low Latency DRAM
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD48576118F1 Folha de dados(HTML) 1 Page - Renesas Technology Corp

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R10DS0257EJ0101 Rev. 1.01
Page 1 of 51
Jan. 15, 2016
Datasheet
µµµµPD48576118F1
576M-BIT Low Latency DRAM
Separate I/O
Description
The
µPD48576118F1 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with
advanced CMOS technology using one-transistor memory cell.
The
µPD48576118F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers
controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are
suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit
configuration.
Specification
• Density: 576M bit
• Organization
-
Separate I/O: 4M words x 18 bits x 8 banks
• Operating frequency: 533 / 400 / 300 MHz
• Interface: HSTL I/O
• Package: 144-pin FBGA
-
Package size: 18.5 x 11
-
Lead free
• Power supply
-
2.5 V VEXT
-
1.8 V VDD
-
1.5 V or 1.8 V VDDQ
• Refresh command
-
Auto Refresh
-
16K cycle / 32 ms for each bank
-
128K cycle / 32 ms for total
• Operating case temperature : Tc = 0 to 95°C
Features
• SRAM-type interface
• Double-data-rate architecture
• PLL circuitry
• Cycle time:
1.875 ns @ tRC = 15 ns
2.5 ns @ tRC = 15 ns
2.5 ns @ tRC = 20 ns
3.3 ns @ tRC = 20 ns
• Non-multiplexed addresses
• Multiplexing option is available.
• Data mask for WRITE commands
• Differential input clocks (CK and CK#)
• Differential input data clocks (DK and DK#)
• Data valid signal (QVLD)
• Programmable burst length: 2 / 4 / 8 (x18)
• User programmable impedance output (25 Ω - 60 Ω)
• JTAG boundary scan
R10DS0257EJ0101
Rev. 1.01
Jan. 15, 2016


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