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UPD48576118F1 Folha de dados(PDF) 1 Page - Renesas Technology Corp |
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UPD48576118F1 Folha de dados(HTML) 1 Page - Renesas Technology Corp |
1 / 52 page R10DS0257EJ0101 Rev. 1.01 Page 1 of 51 Jan. 15, 2016 Datasheet µµµµPD48576118F1 576M-BIT Low Latency DRAM Separate I/O Description The µPD48576118F1 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576118F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. Specification • Density: 576M bit • Organization - Separate I/O: 4M words x 18 bits x 8 banks • Operating frequency: 533 / 400 / 300 MHz • Interface: HSTL I/O • Package: 144-pin FBGA - Package size: 18.5 x 11 - Lead free • Power supply - 2.5 V VEXT - 1.8 V VDD - 1.5 V or 1.8 V VDDQ • Refresh command - Auto Refresh - 16K cycle / 32 ms for each bank - 128K cycle / 32 ms for total • Operating case temperature : Tc = 0 to 95°C Features • SRAM-type interface • Double-data-rate architecture • PLL circuitry • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns • Non-multiplexed addresses • Multiplexing option is available. • Data mask for WRITE commands • Differential input clocks (CK and CK#) • Differential input data clocks (DK and DK#) • Data valid signal (QVLD) • Programmable burst length: 2 / 4 / 8 (x18) • User programmable impedance output (25 Ω - 60 Ω) • JTAG boundary scan R10DS0257EJ0101 Rev. 1.01 Jan. 15, 2016 |
Nº de peça semelhante - UPD48576118F1 |
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Descrição semelhante - UPD48576118F1 |
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