UPD48576118F1 datasheet(14/52 Pages) RENESAS

Nome de Peças	UPD48576118F1

Descrição Electrónicos	576M-BIT Low Latency DRAM

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

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µµµµPD48576118F1

R10DS0257EJ0101 Rev. 1.01

Page 14 of 51

Jan. 15, 2016

Figure 1-1. Clock / Input Data Clock Command / Address Timings

Temperature and Thermal Impedance

Temperature Limits

Parameter

Symbol

MIN.

MAX.

Unit

Note

Reliability junction temperature

TJ

0

+110

°C

1

Operating junction temperature

TJ

0

+100

°C

2

Operating case temperature

TC

0

+95

°C

3

Notes 1.

Temperatures greater than 110°C may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at or above this is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability of the part.

2. Junction temperature depends upon cycle time, loading, ambient temperature, and airflow.

3. MAX operating case temperature; TC is measured in the center of the package. Device functionality is not guaranteed if

the device exceeds maximum TC during operation.

Thermal Impedance

Substrate

Ball

θθθθja (°C/W)

θθθθjb

θθθθjc

Air Flow = 0 m/s Air Flow = 1 m/s Air Flow = 2 m/s

(°C/W)

4 - Layer

Lead free

16.8

13.1

12.3

7.0

2.2

CK#

CK

tCK

tCKDK

tDK

tDKH

tDKL

tAS

tAH

tCKH

tCKL

COMMAND,

ADDRESS

DKx#

DKx

Don't care

VALID

Nº de peça semelhante - UPD48576118F1

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