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FDC697P Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FDC697P
Descrição Electrónicos  P-Channel 1.8V PowerTrench MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC697P Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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January 2004
2004 Fairchild Semiconductor Corporation
FDC697P Rev C2 (W)
FDC697P
P-Channel 1.8V PowerTrenchMOSFET
General Description
This
P-Channel
1.8V
specified
MOSFET
uses
Fairchild’s advanced low voltage Power Trench
process.
It has been optimized for battery power
management applications.
Applications
•
Battery management
•
Load Switch
•
Battery protection
Features
• –8 A, –20 V
RDS(ON) = 20 mΩ @ VGS = –4.5 V
RDS(ON) = 25 mΩ @ VGS = –2.5 V
RDS(ON) = 35 mΩ @ VGS = –1.8 V
• High performance trench technology for extremely
low RDS(ON)
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal
performance in industry-standard package size
SuperSOT-6
TM FLMP
S
S
S
G
S
S
Absolute Maximum Ratings T
A=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current – Continuous
(Note 1a)
–8
A
– Pulsed
–40
PD
Power Dissipation
(Note 1a)
2
(Note 1b)
1.5
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
°C/W
(Note 1b)
111
RθJC
Thermal Resistance, Junction-to-Case
0.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.697
FDC697P
7’’
8mm
3000 units
3
2
1
4
5
6
Bottom
Drain


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