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RR1VWM4S Folha de dados(PDF) 1 Page - Rohm |
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RR1VWM4S Folha de dados(HTML) 1 Page - Rohm |
1 / 7 page Datasheet www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Rectifier Diode RR1VWM4S Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) Standard Rectifier Applications General rectification Features 1) Low forward voltage Structure 2) 3) Small mold type (PMDE) Taping Dimensions (Unit : mm) Construction Silicon diffused junction type Absolute Maximum Ratings (T l= 25°C) Repetitive peak reverse voltage VRM V Reverse voltage VR V Junction temperature Tj °C Storage temperature Tstg °C Electrical Characteristics (T j= 25°C) Symbol Min. Typ. Max. Unit VF 0.9 1.08 1.2 V Reverse current IR -- 10 A Thermal resistance Rth(j-l) -- 30 °C/W High current overload capacity 1 400 175 55 to 175 Symbol Limits Junction to lead Direct voltage IF=1A Conditions Non-repetitive at Tj=25ºC - - VR=400V Tl=125°C Unit 400 Parameter Conditions Duty≦0.5 Forward voltage Parameter A IFSM Non-repetitive forward surge current 60Hz half sin wave, 15 A Average current Io On glass epoxy substrate, 60Hz half sin wave , Resistive load PMDE Anode Cathode ROHM : PMDE dot (year week factory) + day 1.1 0.8 1/4 2016.09 - Rev.A |
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