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RGS60TS65D Folha de dados(PDF) 2 Page - Rohm |
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RGS60TS65D Folha de dados(HTML) 2 Page - Rohm |
2 / 13 page www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Data Sheet RGS60TS65D lThermal Resistance lIGBT Electrical Characteristics (at T j = 25°C unless otherwise specified) VCE = 650V, VGE = 0V Parameter Symbol Values Unit Min. Typ. Max. °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.17 Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.67 Unit Min. Typ. Max. °C/W 5 Parameter Symbol Conditions Values 200 V Collector Cut - off Current ICES - - Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - Tj = 25°C Tj = 175°C 10 Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 1.5mA 5.0 6.0 Collector - Emitter Saturation Voltage VCE(sat) IC = 30A, VGE = 15V μA mA V Tj = 25°C - 1.65 2.10 Tj = 175°C - 2.15 - nA 7.0 V 2/11 2016.07 - Rev.A |
Nº de peça semelhante - RGS60TS65D |
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Descrição semelhante - RGS60TS65D |
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