MMBT3904T datasheet(2/6 Pages) SECOS

Nome de Peças	MMBT3904T

Descrição Electrónicos	NPN Silicon General Purpose Transistors

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Fabricante Electrônico	SECOS [SeCoS Halbleitertechnologie GmbH]

Página de início	http://www.secosgmbh.com

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MMBT3904T

NPN Silicon

General Purpose Transistors

Elektronische Bauelemente

12-Apr-2010 Rev. A

Page 2 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

CHARACTERISTIC

SYMBOL

MIN.

MAX.

UNIT

TEST CONDITIONS

Off Characteristics

Collector-Emitter Breakdown Voltage

(3)

V(BR)CEO

40

-

Vdc

IC =1.0 mAdc

Collector-Base Breakdown Voltage

V(BR)CBO

60

-

Vdc

IC = 10 µAdc

Emitter-Base Breakdown Voltage

V(BR)EBO

6.0

-

Vdc

IE = 10 µAdc

Collector Cut-Off Current

IBL

-50

nAdc VCE = 30 Vdc, VEB = 3.0 Vdc

Emitter Cut-Off Current

ICEX

-50

nAdc VCE = 30 Vdc, VBE = 3.0 Vdc

On Characteristics

(3)

DC Current Gain

(1)

hFE

40

-

IC = 0.1 mAdc, VCE = 1.0 Vdc

70

-

IC = 1.0 mAdc, VCE = 1.0 Vdc

100

300

IC = 10 mAdc, VCE = 1.0 Vdc

60

-

IC = 50 mAdc, VCE = 1.0 Vdc

30

-

IC = 100 mAdc, VCE = 1.0 Vdc

Collector-Emitter Saturation Voltage

(3)

VCE(sat)

-

0.2

Vdc

IC = 10 mAdc, IB = 1.0 mAdc

-0.3

IC = 50 mAdc, IB = 5.0 mAdc

Base-Emitter Saturation Voltage

(3)

VBE(sat)

0.65

0.85

Vdc

IC = 10 mAdc, IB = 1.0 mAdc

-0.95

IC = 50 mAdc, IB = 5.0 mAdc

Small-Signal Characteristics

Curren-Gain-Bandwidth Product

fT

200

-

MHz

VCE = 20 Vdc, IC = 10 mAdc,

f = 100 MHz

Output Capacitance

Cobo

-4.0

pF

VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz

Input Capacitance

Cibo

-8.0

pF

VBE = 0.5 Vdc, IE = 0, f = 1.0 MHz

Input Impedancen

hie

1.0

10

pF

VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz

Voltage Feedback Ratio

hre

0.5

8.0

X10

-4

VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz

Small-Signal Current Gain

hfe

100

400

-

VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz

Output Admittance

hoe

1.0

40

θmhos VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz

Noise Figure

NF

-

5.0

dB

VCE = 5.0 Vdc, IC = 100 µAdc,

RS = 1.0k f = 1.0 kHz

Switching Characteristics

Delay Time

Td

-

35

nS

VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10

mAdc, IB1 = 1.0 mAdc

Rise Time

Tr

-

35

nS

Storage Time

TS

-

200

nS

VCC = 3.0 Vdc, IC = 10 mAdc,

IB1 = IB2 = 1.0 mAdc

Fall Time

TF

-

50

nS

3.

Pulse Test：Pulse Width ≦ 300 μs, Duty Cycle≦ 2.0%.

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