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FDZ293P Folha de dados(PDF) 3 Page - Fairchild Semiconductor

Nome de Peças FDZ293P
Descrição Electrónicos  P-Channel 2.5 V Specified PowerTrench BGA MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ293P Folha de dados(HTML) 3 Page - Fairchild Semiconductor

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FDZ293P Rev. C
Notes:
1. RθJA is determined with the device mounted on a 1 in
2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material.
The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference.
For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and
RθJB are guaranteed by design while RθJA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.4
A
IS
VSD
Drain–Source Diode Forward Voltage VGS = 0V, IS = –1.4A (Note 2)
–0.7
–1.2
V
trr
Diode Reverse Recovery Time
IF = –4.6A,
diF/dt = 100A/µs
17
nS
Qrr
Diode Reverse Recovery Charge
5
nC
a) 72˚C/W when
mounted on a
1in2 pad of 2 oz
copper, 1.5” x
1.5” x 0.062”
thick PCB
b) 157˚C/W when
mounted on a
minimum pad of 2 oz
copper
Electrical Characteristics TA = 25°C unless otherwise noted (Continued)


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