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FDZ293P Folha de dados(PDF) 3 Page - Fairchild Semiconductor |
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FDZ293P Folha de dados(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page 3 www.fairchildsemi.com FDZ293P Rev. C Notes: 1. RθJA is determined with the device mounted on a 1 in 2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.4 A IS VSD Drain–Source Diode Forward Voltage VGS = 0V, IS = –1.4A (Note 2) –0.7 –1.2 V trr Diode Reverse Recovery Time IF = –4.6A, diF/dt = 100A/µs 17 nS Qrr Diode Reverse Recovery Charge 5 nC a) 72˚C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157˚C/W when mounted on a minimum pad of 2 oz copper Electrical Characteristics TA = 25°C unless otherwise noted (Continued) |
Nº de peça semelhante - FDZ293P |
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Descrição semelhante - FDZ293P |
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