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MTB014N15RH8 Folha de dados(PDF) 2 Page - Cystech Electonics Corp. |
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MTB014N15RH8 Folha de dados(HTML) 2 Page - Cystech Electonics Corp. |
2 / 10 page CYStech Electronics Corp. Spec. No. : C024H8 Issued Date : 2017.12.08 Revised Date : Page No. : 2/10 MTB014N15RH8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol 10s Steady State Unit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TC=25 °C, VGS=10V (Note 1) 36 Continuous Drain Current @ TC=100 °C, VGS=10V (Note 1) ID 22.8 Continuous Drain Current @ TA=25 °C, VGS=10V (Note 2) 12 8 Continuous Drain Current @ TA=70 °C, VGS=10V (Note 2) 9.6 6.4 Continuous Drain Current @ TA=85 °C, VGS=10V (Note 2) IDSM 8.7 5.8 Pulsed Drain Current (Note 3) IDM 120 *1 Avalanche Current @ L=0.1mH (Note 3) IAS 80 A Avalanche Energy @ L=1mH, ID=35A, VDD=25V (Note 4) EAS 612 Repetitive Avalanche Energy @ L=0.05mH (Note 3) EAR 5 *2 mJ TC=25℃ (Note 1) 50 TC=100℃ (Note 1) PD 20 TA=25 °C (Note 2) 5.7 2.5 TA=70 °C (Note 2) 4.0 1.8 Total Power Dissipation TA=85 °C (Note 2) PDSM 3.6 1.6 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Typical Maximum Unit t≤10s 18 22 Thermal Resistance, Junction-to-ambient (Note 2) Steady State RθJA 42 50 Thermal Resistance, Junction-to-case RθJC 2.2 2.5 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 .The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3 .Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4.100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=25V |
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