CYStech Electronics Corp.

Spec. No. : C024H8

Issued Date : 2017.12.08

Revised Date :

Page No. : 2/10

MTB014N15RH8

CYStek Product Specification

Parameter

Symbol

10s

Steady State Unit

Drain-Source Voltage

150

Gate-Source Voltage

±20

V

(Note 1)

36

22.8

(Note 2)

12

8

(Note 2)

9.6

6.4

(Note 2)

8.7

5.8

Pulsed Drain Current

(Note 3)

Avalanche Current @ L=0.1mH

(Note 3)

80

A

(Note 4)

612

Repetitive Avalanche Energy @ L=0.05mH

(Note 3)

mJ

(Note 1)

50

(Note 1)

20

°C

(Note 2)

5.7

2.5

°C

(Note 2)

4.0

1.8

Total Power Dissipation

°C

(Note 2)

3.6

1.6

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol

Typical

Maximum

Unit

t≤10s

18

22

Thermal Resistance, Junction-to-ambient

(Note 2)

Steady State

42

50

Thermal Resistance, Junction-to-case

2.2

2.5

°C/W

Note : 1

in setting the upper dissipation limit for cases where additional heatsinking is used.

2

temperature of 150°C. The value in any given application depends on the user’s specific board design.

3