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2SK3471 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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2SK3471 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SK3471 2002-09-04 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications · Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.4 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) · Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kW) VDGR 500 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 0.5 Drain current Pulse (Note 1) IDP 1.5 A Drain power dissipation PD 0.5 W Drain power dissipation (Note 2) PD 1.5 W Single pulse avalanche energy (Note 3) EAS 14.3 mJ Avalanche current IAR 0.5 A Repetitive avalanche energy (Note 4) EAR 0.05 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch-a) 250 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm ´ 25.4 mm ´ 0.8 mm) Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 W, IAR = 0.5 A Note 4: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1B Weight: 0.05 g (typ.) Marking Z G (The two digits represent the part number.) |
Nº de peça semelhante - 2SK3471 |
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Descrição semelhante - 2SK3471 |
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