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2SK3471 Folha de dados(PDF) 1 Page - Toshiba Semiconductor

Nome de Peças 2SK3471
Descrição Electrónicos  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
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2SK3471
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3471
Switching Regulator and DC-DC Converter Applications
· Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.)
· High forward transfer admittance: |Yfs| = 0.4 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 kW)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
0.5
Drain current
Pulse (Note 1)
IDP
1.5
A
Drain power dissipation
PD
0.5
W
Drain power dissipation
(Note 2)
PD
1.5
W
Single pulse avalanche energy
(Note 3)
EAS
14.3
mJ
Avalanche current
IAR
0.5
A
Repetitive avalanche energy (Note 4)
EAR
0.05
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (ch-a)
250
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm
´ 25.4 mm ´ 0.8 mm)
Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 W, IAR =
0.5 A
Note 4: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
Marking
Z
G
(The two digits represent the
part number.)


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