TSM160N10LCR datasheet(1/6 Pages) TSC

Nome de Peças	TSM160N10LCR

Descrição Electrónicos	Low gate charge for fast power switching

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Fabricante Electrônico	TSC [Taiwan Semiconductor Company, Ltd]

Página de início	http://www.taiwansemi.com

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TSM160N10LCR

Taiwan Semiconductor

1

Version: A1610

N-Channel Power MOSFET

100V, 46A, 16m

Ω

FEATURES

● Low R

DS(ON) to minimize conductive losses

● Logic level

● Low gate charge for fast power switching

● 100% UIS and R

g tested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● BLDC Motor Control

● Telecom power

● Primary and Secondary Side Switch

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

VDS

100

V

RDS(on) (max)

VGS = 10V

16

m

Ω

VGS = 4.5V

20

Qg

36

nC

PDFN56

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A = 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

(Note 1)

TC = 25°C

ID

46

A

TA = 25°C

8

Pulsed Drain Current

IDM

184

A

Single Pulse Avalanche Current

(Note 2)

IAS

26

A

Single Pulse Avalanche Energy

(Note 2)

EAS

101

mJ

Total Power Dissipation

TC = 25°C

PD

83

W

TC = 125°C

17

Total Power Dissipation

TA = 25°C

PD

2.6

W

TA = 125°C

0.5

Operating Junction and Storage Temperature Range

TJ, TSTG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Case Thermal Resistance

RӨJC

1.5

°C/W

Junction to Ambient Thermal Resistance

RӨJA

48

°C/W

Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is

determined by the user’s board design.

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TSM160N10LCR Folha de dados(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

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