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IRFB3207 Folha de dados(PDF) 4 Page - International Rectifier

Nome de Peças IRFB3207
Descrição Electrónicos  HEXFET Power MOSFET
Download  11 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRFB3207 Folha de dados(HTML) 4 Page - International Rectifier

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IRF/B/S/SL3207
4
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Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
50
100
150
200
LIMITED BY PACKAGE
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
70
80
90
100
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
0
1000
2000
3000
4000
I D
TOP
12A
16A
BOTTOM
75A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC


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