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TC554161AFTI-10L Folha de dados(PDF) 8 Page - Toshiba Semiconductor

Nome de Peças TC554161AFTI-10L
Descrição Electrónicos  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
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TC554161AFTI-10L Folha de dados(HTML) 8 Page - Toshiba Semiconductor

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TC554161AFTI-70,-85,-10,-70L,-85L,-10L
2001-08-17
8/10
Note:
(1)
R/W remains HIGH for the read cycle.
(2)
If CE goes LOW coincident with or after R/W goes LOW, the outputs will remain at high impedance.
(3)
If CE goes HIGH coincident with or before R/W goes HIGH, the outputs will remain at high impedance.
(4)
If OE is HIGH during the write cycle, the outputs will remain at high impedance.
(5)
Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be
applied.
DATA RETENTION CHARACTERISTICS (Ta
==== ----40° to 85°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDH
Data Retention Supply Voltage
2.0
¾
5.5
V
VDH = 3.0 V
¾
¾
100
-70,-85,-10
VDH = 5.5 V
¾
¾
200
VDH = 3.0 V
¾
¾
50*
IDDS2
Standby Current
-70L,-85L,-10L
VDH = 5.5 V
¾
¾
100
mA
tCDR
Chip Deselect to Data Retention Mode Time
0
¾
¾
ns
tR
Recovery Time
5
¾
¾
ms
*:
5
mA (max) at Ta = -40° to 40°C
CONTROLLED DATA RETENTION MODE
Note: When CE is operating at the VIH level (2.4V), the standby current is given by IDDS1 during the transition
of VDD from 4.5 to 2.6V.
CE
VDD
4.5 V
GND
VIH
DATA RETENTION MODE
tR
(See Note)
(See Note)
tCDR
VDD - 0.2 V
CE


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