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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IRF100B201 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF100B201 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF100B201， IIRF100B201 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 100 V VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=115A 4.2 mΩ IGSS Gate-Source Leakage Current VGS=±20V ±0.1 μ A IDSS Drain-Source Leakage Current VDS=100V; VGS= 0V 20 μ A VSD Diode forward voltage IS=115A, VGS = 0 V 1.3 V |
Nº de peça semelhante - IRF100B201 |
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Descrição semelhante - IRF100B201 |
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