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IRF3707Z Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças IRF3707Z
Descrição Electrónicos  N-Channel MOSFET Transistor
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF3707Z Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRF3707Z Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRF3707Z Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRF3707Z， IIRF3707Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250µA
30
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=25μA
1.35
2.25
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=21A
9.5
mΩ
IGSS
Gate-Source Leakage Current
VGS=± 20V
±0.1
μ
A
IDSS
Drain-Source Leakage Current
VDS=24V; VGS= 0V
1.0
μ
A
VSD
Diode forward voltage
IS =17A, VGS = 0 V
1.0
V


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