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IRFP4710 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças IRFP4710
Descrição Electrónicos  N-Channel MOSFET Transistor
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFP4710 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRFP4710 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRFP4710 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRFP4710，IIRFP4710
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
100
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=250μA
3.5
5.5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=45A
14
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V
±
0.1
μ
A
IDSS
Drain-Source Leakage Current
VDS=95V; VGS= 0V
1.0
μ
A
VSD
Diode forward voltage
IS=45A, VGS = 0V
1.3
V


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