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MTB010P04H8-0-T6-G Folha de dados(PDF) 4 Page - Cystech Electonics Corp.

Nome de Peças MTB010P04H8-0-T6-G
Descrição Electrónicos  P-Channel Enhancement Mode Power MOSFET
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Fabricante Electrônico  CYSTEKEC [Cystech Electonics Corp.]
Página de início  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB010P04H8-0-T6-G Folha de dados(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C030H8
Issued Date : 2018.01.26
Revised Date :
Page No. : 4/ 11
MTB010P04H8
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
10
20
30
40
50
60
70
80
90
100
024
68
10
-VDS, Drain-Source Voltage(V)
10V,9V,8V,7V,6V,5V
-VGS=3V
3.5V
4V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250
μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
1
10
100
0.1
1
10
100
-ID, Drain Current(A)
VGS=-4.5V
VGS=-12V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
024
68
10
-IDR, Reverse Drain Current(A)
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
5
10
15
20
25
30
35
40
45
50
024
68
10
-VGS, Gate-Source Voltage(V)
ID=-15A
Drain-Source On-State Resistance vs Junction Tempearture
0
0.4
0.8
1.2
1.6
2
2.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=-12V, ID=-15A
RDS(ON)@ Tj=25°C : 8.3mΩ (typ.)


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