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KDR407S Folha de dados(PDF) 1 Page - KEC(Korea Electronics)

Nome de Peças KDR407S
Descrição Electrónicos  SILICON EPITAXIAL PLANAR DIODE
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Fabricante Electrônico  KEC [KEC(Korea Electronics)]
Página de início  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KDR407S Folha de dados(HTML) 1 Page - KEC(Korea Electronics)

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2014. 9. 24
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SEMICONDUCTOR
TECHNICAL DATA
KDR407S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 0
For High frequency rectification.
Switching Power Supply.
FEATURES
・Low Forward Voltage : V
F max=0.5V.
・I
O=750mA recification possible.
MAXIMUM RATING (Ta=25
℃)
DIM
MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q
0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
E
1
2
3
B
1.30 MAX
LL
PP
P7
+
_
Q
1. NC
2. ANODE
3. CATHODE
2
1
3
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
Type Name
Marking
Lot No.
DN
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
VR
IR=1mA
40
-
-
V
Forward Voltage
VF
IF=0.75A
-
-
0.5
V
Reverse Current
IR
VR=40V
-
-
10
μA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
40
V
Reverse Voltage
VR
40
V
Average Forward Current
IO
0.75
A
Non-repetitive peak surge current
IFSM
5
A
Junction Temperature
Tj
125
℃
Storage Temperature
Tstg
-55
～125
℃


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