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BAP70-05 Folha de dados(PDF) 3 Page - NXP Semiconductors |
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BAP70-05 Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 9397 750 12811 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 5 April 2004 3 of 7 Philips Semiconductors BAP70-05 Silicon PIN diode rD diode forward resistance f = 100 MHz; see Figure 2 IF = 0.5 mA - 77 100 Ω IF = 1 mA - 40 50 Ω IF =10mA - 5.4 7 Ω IF = 100 mA - 1.4 1.9 Ω τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA - 1.25 - µs LS series inductance IF = 100 mA; f = 100 MHz - 1.4 - nH Table 6: Electrical characteristics …continued Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit f = 1 MHz; Tj =25 °C. f = 100 MHz; Tj =25 °C. Fig 1. Diode capacitance as a function of reverse voltage; typical values. Fig 2. Diode forward resistance as a function of forward current; typical values. VR (V) 020 15 510 001aaa519 200 400 600 Cd (fF) 0 IF (mA) 10−1 102 10 1 mcd769 10 1 102 rD ( Ω) 10−1 |
Nº de peça semelhante - BAP70-05 |
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Descrição semelhante - BAP70-05 |
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